|
|
PDF FGA50S110P Data sheet ( Hoja de datos )
| Número de pieza | FGA50S110P | |
| Descripción | 50A Shorted-anode IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGA50S110P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
FGA50S110P
1100 V, 50 A Shorted-anode IGBT
August 2013
Features
• Intrinsic Anti-parallel Diode for Soft-switching Applications
• High Switching Frequency Range 10 kHz to 50kHz
• High Temperature Stable Behavior (Tjmax = 175oC)
• Low Saturation Voltage Drop : VCE(sat) = 2.06 V @ IC = 50 A
• Robust Pot Detection Noise Immunity
• RoHS Compliant (Pb-free lead plating)
Applications
• Induction Cooker, Rice-jar, and Microwave Oven
• Soft-switching Applications
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-
duction and switching performances for switching applications.
This device is tailored to induction cooker and microwave oven.
C
G CE
TO-3PN
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Notes:
1: Limited by Tjmax
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
G
E
Ratings
1100
± 25
50
30
120
50
30
300
150
-55 to +175
-55 to +175
300
Typ.
-
-
Max.
0.6
40
Unit
V
V
A
A
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2013 Fairchild Semiconductor Corporation
FGA50S110P Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
tr
100
10
1
10
td(on)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 15. Switching Loss vs. Gate Resistance
10000
Eon
1000
100
10
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 50A
TC = 25oC
TC = 175oC
20 30 40 50
Gate Resistance, RG [Ω]
60
Figure 17. Turn off Switching
SOA Characteristics
200
100
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
td(off)
tf
100
10
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 16. Switching Loss vs. Collector Current
5000
1000
Eon
100
10
Common Emitter
Eoff VGE = 15V, RG = 10Ω
TC = 25oC
TC = 175oC
20 30 40
Collector Current, IC [A]
50
Figure 18. Forward Characteristics
100
10
Safe Operating Area
VGE = 15V, TC = 175oC
1
1 10 100
Collector-Emitter Voltage, VCE [V]
1000
10
1
0.1
0
TC = 25oC
TC = 175oC
123
Forward Voltage, VF [V]
4
©2013 Fairchild Semiconductor Corporation
FGA50S110P Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGA50S110P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGA50S110P | 50A Shorted-anode IGBT | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |