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Número de pieza | FTS2012 | |
Descripción | Ultrahigh-Speed Switching Applications | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FTS2012 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Ordering number:ENN6360
N-Channel Silicon MOSFET
FTS2012
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
Package Dimensions
unit:mm
2147A
3.0
0.65
[FTS2012]
0.425
85
Specifications
Absolute Maximum Ratings at Ta = 25˚C
14
0.25
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
0.125 7 : Source
8 : Drain
SANYO : TSSOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (1000mm2×0.8mm)
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : S2012
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=8A
ID=8A, VGS=10V
ID=4A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
30
±20
8
32
1.3
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.0 2.4 V
9.8 14
S
14 19 mΩ
22 31 mΩ
1550
pF
350 pF
220 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-1937 No.6360-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FTS2012.PDF ] |
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