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PDF FQP5N50 Data sheet ( Hoja de datos )
| Número de pieza | FQP5N50 | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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500V N-Channel MOSFET
Product specification
FQP5N50
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s
proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l Value Unit
Drain-Source Voltage
VDSS 510 V
Drain Current - Continuous
ID 5.0 A
Drain Current - Pulsed
Gate-Source Voltage
IDM
VGSS
18
±25
A
V
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
PD 85 W
Tj 150 oC
Tstg -55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID =250μA
Zero Gate Voltage Drain Current
IDSS VDS =500V, VGS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
IGSSF
IGSSR
VGS =25V, VDS =0V
VGS = -25V, VDS =0V
Gate Threshold Voltage
VGS(th) VDS = VGS , ID =250μA
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 2.5 A
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 5.0 A
Min.
510
—
—
—
2.0
—
—
Typ.
—
—
—
—
—
—
—
Max. Unit
—V
10 uA
100 nA
-100
4.0
nA
V
2.0 W
1.4 V
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