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PDF FDS6670AS Data sheet ( Hoja de datos )

Número de pieza FDS6670AS
Descripción 30V N-Channel PowerTrench SyncFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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March 2005
FDS6670AS
30V N-Channel PowerTrench® SyncFET
General Description
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
13.5 A, 30 V. RDS(ON) max= 9.0 m@ VGS = 10 V
RDS(ON) max= 11.5 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670AS
FDS6670AS
13’’
FDS6670AS
FDS6670AS_NL (Note 4)
13’’
©2005 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
13.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
FDS6670AS Rev A (X)

1 page




FDS6670AS pdf
Typical Characteristics (continued)
10
ID =13.5A
8
6
VDS = 10V
20V
15V
4
2
0
0 5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2400
1800
1200
f = 1MHz
VGS = 0 V
Ciss
Coss
600
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 125°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6670AS Rev A (X)

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