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PDF FTD2012 Data sheet ( Hoja de datos )
| Número de pieza | FTD2012 | |
| Descripción | N- Channel Silicon MOS FET Load S/W USE | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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FTD2012
N- Channel Silicon MOS FET
Load S/W USE
Features
• Low ON-state resistance.
• 4V drive.
• Mount height of 1.1mm.
• Complex Type enabling high density mount
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µS, dutycycle≤1%
Mounted on ceramic board
(1000mm2 ! 0.8mm) 1unit
Mounted on ceramic board
(1000mm2 ! 0.8mm)
30
±20
4.5
20
0.8
1.3
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
V(BR)DSS ID=1mA , VGS=0
min
30
Zero Gate Voltage Drain Current
IDSS
VDS=30V , VGS=0
Gate to Source Leakage Current
IGSS
VGS=±16V , VDS=0
Cutoff Voltage
VGS(off)
VDS=10V , ID=1mA
1.0
Forward Transfer Admittance
| yfs |
VDS=10V , ID=4.5A
6.3
Static Drain to Source
RDS(on) 1 ID=4.5A , VGS=10V
On State Resistance
RDS(on) 2 ID=4A , VGS=4V
Input Capacitance
Ciss VDS=10V , f=1MHz
Output Capacitance
Coss VDS=10V , f=1MHz
Reverse Transfer Capacitance
Crss VDS=10V , f=1MHz
Turn-ON Delay Time
td(on)
See Specified Test Circuit
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
tr
td(off)
tf
Qg
"
"
"
Gate Source Charge
Qgs VDS=10V, VGS=10V, ID=4.5A
Gate Drain Charge
Qgd
Diode Forward Voltage
Marking : D2012
Switching Time Test Circuit
VIN
10V
0V
VIN
VDD=15V
ID=4.5A
RL=3.3Ω
VSD
IS=4.5A , VGS=0
Electrical Connection
D2 S2 S2 G2
Case Outline
TSSOP8(unit:mm)
3.0
0.65
8 7 65
PW=10µS
D.C.≤1%
D VOUT
TENTATIVE
unit
V
V
A
A
W
W
°C
°C
typ max unit
V
1 µA
±10 µA
2.4 V
9S
26 34 mΩ
43 60 mΩ
750 pF
170 pF
105 pF
12 ns
56 ns
73 ns
38 ns
18 nC
2.3 nC
3.2 nC
0.8 1.2 V
0.425
G
P.G 50Ω
FTD2012
S
D1 S1 S1 G1
1 23 4
0.25
Specifications and information herein are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
0.125
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
990702TM2fXHD
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FTD2012.PDF ] | |
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