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PDF 2SA2029-S Data sheet ( Hoja de datos )

Número de pieza 2SA2029-S
Descripción PNP Bipolar Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! 2SA2029-S Hoja de datos, Descripción, Manual

Small Signal Product
PNP Bipolar Transistor
2SA2029-Q/R/S
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction
- Surface Mount Device Type
- Moisture sensitivity level 1
- For high voltage switcing and amplifier application
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Excellent hFE linearity
- Complements the 2SC5658
SOT-723
MECHANICAL DATA
- Case: SOT-723 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 1.27mg +/- 20%
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
-60
-50
-6
-150
150
150
-55 to + 150
UNIT
V
V
V
mA
mW
°C
°C
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Currect
Emitter Cut-Off Currect
DC Current Transfer Ration
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Remark:
Classifiaction of hFE
Rank
Range
Q
120~270
R
180~390
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
MIN
-60
-50
-6
120
TYP
140
MAX
-0.1
-0.1
560
-0.5
5
TEST CONDITION
IC=-50μA , IE=0
IC=-1mA , IB=0
IE=-50μA , IC=0
VCB=-60V , IE=0
VEB=-6V , IC=0
VCB=-6V , IC=1mA
IC=-50mA , IB=-5mA
VCE=-12V , IC=2mA , f=30MHz
VCB=-12V , IE=0 , f=1MHz
UNIT
V
V
V
μA
μA
V
MHz
pF
S
270~560
Document Number: DS_S1402005
Version: A14

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