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PDF FSGM0465RWDTU Datasheet ( Hoja de datos )

Número de pieza FSGM0465RWDTU
Descripción Green-Mode Fairchild Power Switch
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo
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FSGM0465RWDTU datasheet

1 Page

FSGM0465RWDTU pdf
Electrical Characteristics
TJ = 25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min.
SenseFET Section
BVDSS
IDSS
RDS(ON)
CISS
COSS
tr
tf
td(on)
td(off)
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Drain-Source On-State Resistance
Input Capacitance(13)
Output Capacitance(13)
Rise Time
Fall Time
Turn-on Delay Time
Turn-off Delay Time
Control Section
fS
ΔfS
DMAX
DMIN
IFB
VSTART
VSTOP
VOP
tS/S
Switching Frequency
Switching Frequency Variation(13)
Maximum Duty Ratio
Minimum Duty Ratio
Feedback Source Current
UVLO Threshold Voltage
VCC Operating Range
Internal Soft-Start Time
Burst-Mode Section
VBURH
VBURL
Hys
Burst-Mode Voltage
Protection Section
ILIM Peak Drain Current Limit
VSD Shutdown Feedback Voltage
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(13)(14)
VOVP Over-Voltage Protection
tOSP
www.DataSheeVt4OUSP.comOPruottpeucttiSohno(1r3t)
tOSP_FB
Threshold Time
Threshold VFB
VFB Blanking Time
TSD Thermal Shutdown Temperature(13)
Hys
VCC = 0V, ID = 250μA
VDS = 520V, TA = 125°C
VGS=10V, ID =1A
VDS = 25V, VGS = 0V,f=1MHz
VDS = 25V, VGS = 0V,f=1MHz
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VCC = 14V, VFB = 4V,
-25°C < TJ < +125°C
VCC = 14V, VFB = 4V
VCC = 14V, VFB = 0V
VFB = 0
VFB = 0V, VCC Sweep
After Turn-on, VFB = 0V
VSTR = 40V, VCC Sweep
VCC = 14V, VFB Sweep
di/dt = 300mA/μs
VCC = 14V, VFB Sweep
VCC = 14V, VFB = 4V
VCC Sweep
OSP Triggered when
tON<tOSP & VFB>VOSP
(Lasts Longer than tOSP_FB)
Shutdown Temperature
Hysteresis
650
60
65
160
11
7.0
13
0.6
0.4
1.64
5.5
2.5
23.0
1.0
1.8
2.0
130
Typ. Max.
250
2.1 2.6
436
65
24
24
13
30
66 72
±5 ±10
70 75
0
210 260
12 13
7.5 8.0
23
15
0.7 0.8
0.5 0.6
200
1.80 1.96
6.0 6.5
3.3 4.1
300
24.5 26.0
1.2 1.4
2.0 2.2
2.5 3.0
140 150
30
Unit
V
μA
pF
pF
ns
ns
ns
ns
kHz
%
%
%
μA
V
V
V
ms
V
V
mV
A
V
μA
ns
V
μs
V
μs
°C
°C
© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
Continued on the following page…
www.fairchildsemi.com
5

5 Page

FSGM0465RWDTU arduino
4.3. Output-Short Protection (OSP): If the output is
shorted, steep current with extremely high di/dt can
flow through the SenseFET during the minimum turn-
on time. Such a steep current brings high-voltage
stress on the drain of the SenseFET when turned off.
To protect the device from this abnormal condition,
OSP is included. It is comprised of detecting VFB and
SenseFET turn-on time. When the VFB is higher than
2V and the SenseFET turn-on time is lower than
1.2μs, the FSGM0465R recognizes this condition as
an abnormal error and shuts down PWM switching
until VCC reaches VSTART again. An abnormal
condition output short is shown in Figure 22.
4.5 Thermal Shutdown (TSD): The SenseFET and
the control IC on a die in one package makes it
easier for the control IC to detect the over
temperature of the SenseFET. If the temperature
exceeds ~140°C, the thermal shutdown is triggered
and the FSGM0465R stops operation. The
FSGM0465R operates in auto-restart mode until the
temperature decreases to around 110°C, when
normal operation resumes.
5. Soft Burst-Mode Operation: To minimize power
dissipation in standby mode, the FSGM0465R enters
burst-mode operation. As the load decreases, the
feedback voltage decreases. As shown in Figure 23,
the device automatically enters burst mode when the
feedback voltage drops below VBURL (500mV). At this
point, switching stops and the output voltages start to
drop at a rate dependent on standby current load. This
causes the feedback voltage to rise. Once it passes
VBURH (700mV), switching resumes. At this point, the
drain current peak increases gradually. This soft burst-
mode can reduce audible noise during burst-mode
operation. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the SenseFET,
thereby reducing switching loss in standby mode.
VO
Figure 22. Output-Short Protection
4.4 Over-Voltage Protection (OVP): If the
secondary-side feedback circuit malfunctions or a
solder defect causes an opening in the feedback
path, the current through the opto-coupler transistor
becomes almost zero. Then VFB climbs up in a similar
manner to the overload situation, forcing the preset
maximum current to be supplied to the SMPS until
the overload protection is triggered. Because more
energy than required is provided to the output, the
output voltage may exceed the rated voltage before
the overload protection is triggered, resulting in the
breakdown of the devices in the secondary side. To
prevent this situation, an OVP circuit is employed. In
general, the VCC is proportional to the output voltage
and the FSGM0465R uses VCC instead of directly
monitoring the output voltage. If VCC exceeds 24.5V,
an OVP circuit is triggered, resulting in the
termination of the switching operation. To avoid
undesired activation of OVP during normal operation,
VCC should be designed to be below 24.5V.
www.DataSheet4U.com
VFB
0.70V
0.50V
IDS
Soft Burst
VDS
Switching
Switching
t1 disabled t2 t3 disabled t4
Figure 23. Burst-Mode Operation
t
t
t
t
© 2009 Fairchild Semiconductor Corporation
FSGM0465R • Rev. 1.0.2
11
www.fairchildsemi.com

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