DataSheet.es    


PDF KF5N53I Data sheet ( Hoja de datos )

Número de pieza KF5N53I
Descripción N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricantes KEC 
Logotipo KEC Logotipo



Hay una vista previa y un enlace de descarga de KF5N53I (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! KF5N53I Hoja de datos, Descripción, Manual

SEMICONDUCTOR
TECHNICAL DATA
KF5N53D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 525V, ID= 4.1A
Drain-Source ON Resistance : RDS(ON)=1.5
Qg(typ) = 12nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
525
30
4.1
2.6
13
200
4.3
4.5
59.5
0.48
150
-55 150
2.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF5N53D
A
CD
B
H
G
FF
J
E
123
O
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF5N53I
AH
CJ
M
N
G
FF
123
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
PC
D
5.34 +_0.3
0.7 +_ 0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
L J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
PIN CONNECTION
D
IPAK(1)
G
S
2011. 3. 31
Revision No : 0
1/6

1 page




KF5N53I pdf
KF5N53D/I
Fig12. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2011. 3. 31
Revision No : 0
5/6

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet KF5N53I.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
KF5N53DN CHANNEL MOS FIELD EFFECT TRANSISTORKEC
KEC
KF5N53DSN CHANNEL MOS FIELD EFFECT TRANSISTORKEC
KEC
KF5N53DZN CHANNEL MOS FIELD EFFECT TRANSISTORKEC
KEC
KF5N53FSN CHANNEL MOS FIELD EFFECT TRANSISTORKEC
KEC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar