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PDF MJE13005G Data sheet ( Hoja de datos )
| Número de pieza | MJE13005G | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
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MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• VCEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A,
100_C is 180 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation @ TA = 25_C
Derate above 25°C
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Value
400
700
9
4
8
2
4
6
12
2
0.016
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
75
0.6
−65 to
+150
W
W/_C
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Thermal Resistance, Junction−to−Case
RqJC
1.67 _C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 9
1
http://onsemi.com
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13005G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13005G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13005/D
1 page  
MJE13005G
Table 2. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
PW
DUTY CYCLE ≤ 10% 68
tr, tf ≤ 10 ns
+ 5 V
0.001 mF
1N4933 33
MJE210
33 1N4933
2N222
1k 2
RB
1k
+ 5 V
IB
VCC
L
IC
1N493
3
NOTE
0.02 mF 270
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1k
2N2905
47 100
1/2 W
T.U.T.
MJE200
- VBE(off)
MR826*
Vclamp
*SELECTED FOR ≥ 1 kV
5.1 k
VCE
51
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200 mH/20 A
Lcoil = 200 mH
OUTPUT WAVEFORMS
IC
IC(pk)
tf CLAMPED
tf UNCLAMPED ≈ t2
t1 tf
t
VCE
VCE or
Vclamp
TIME
t2
t
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICpk)
VCC
t2 ≈
Lcoil (ICpk)
Vclamp
VCC = 20 V
Vclamp = 300 Vdc
Test Equipment
Scope−Tektronics
475 or Equivalent
RESISTIVE
SWITCHING
+125 V
RC
TUT
RB SCOPE
D1
- 4.0
V
VCC = 125 V
RC = 62 W
D1 = 1N5820 or Equiv.
RB = 22 W
+10 V
25 ms
0
-8 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
ZqJC(t) = r(t) RqJC
RqJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02 0.05 0.1 0.2
0.5 1
2 5 10 20
t, TIME (ms)
50 100 200
500
Figure 10. Typical Thermal Response [ZqJC(t)]
1k
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