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PDF 2SB1386 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1386 | |
| Descripción | Low Frequency Transistor | |
| Fabricantes | KEXIN | |
| Logotipo |  |
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SMD Type
Low Frequency Transistor
2SB1386
Transistors
Features
Low VCE(sat).
VCE(sat) = -0.35V (Typ.)
(IC/IB = -4A / -0.1A)
Excellent DC current gain
Epitaxial planar type
PNP silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(Pulse)
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Rating
-30
-20
-6
-5
-10
0.5
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Testconditons
BVCBO IC=-50ìA
BVCEO IC=-1mA
BVEBO IE=-50ìA
ICBO VCB=-20V
IEBO VEB=-5V
VCE(sat) IC=-4A,IB=-0.1A
hFE VCE=-2V, IC=-0.5A
Cob VCE=-6V, IE=50mA, f=30MHz
fT VCB=-20V, IE=0A, f=1MHz
Unit
V
V
V
A
A
W
Min Typ Max Unit
-30 V
-20 V
-6 V
-0.5 ìA
-0.5 ìA
-1 V
82 390
120 MHz
60 pF
hFE Classification
Marking
Rank
hFE
P
82 180
BH
Q
120 270
R
180 390
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