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PDF FDB105 Data sheet ( Hoja de datos )

Número de pieza FDB105
Descripción SILICON BRIDGE RECTIFIERS
Fabricantes Galaxy Semi-Conductor 
Logotipo Galaxy Semi-Conductor Logotipo



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No Preview Available ! FDB105 Hoja de datos, Descripción, Manual

BL GALAXY ELECTRICAL
SILICON BRIDGE RECTIFIERS
FDB101 --- FDB107
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
DB - 1
.255(6.5)
.245(6.2)
.310(7.9)
.290(7.4)
.365(9.3)
.355(9.0)
.060(1.5)
.020(.51)
.016(.41)
.205(5.2)
.195(5.0)
.135(3.4)
.155(2.9)
.165(4.2)
.155(3.9)
.350(8.9)
.300(7.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @TA=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with IF=0.5A,IR=1A, Irr=0.25A.
FDB
101
VRRM
VRMS
VDC
50
35
50
IF(AV)
FDB
102
100
70
100
FDB
103
200
140
200
FDB
104
400
280
400
FDB
105
600
420
600
1.0
FDB
106
800
560
800
FDB
107
UNITS
1000
700
1000
V
V
V
A
IFSM
VF
IR
t rr
TJ
TSTG
30.0
1.3
10.0
1.0
150 250
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
500 ns
www.galaxycn.com
Document Number 0287011
BLGALAXY ELECTRICAL
1.

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