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Número de pieza LDTA143EET1G
Descripción Bias Resistor Transistors
Fabricantes LRC 
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No Preview Available ! LDTA143EET1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Pb-Free Package is Available.
LDTA143EET1
3
1
2
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
VCBO
VCEO
IC
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
DEVICE MARKING AND ORDERING INFORMATION
Device
LDTA143EET1
LDTA143EET1G
Marking
6J
6J
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
Symbol
PD
RθJA
PD
RθJA
TJ, Tstg
Max
200
1.6
600
300
2.4
400
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
LDTA143EET1-1/3

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