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PDF LDTA123EET1 Data sheet ( Hoja de datos )

Número de pieza LDTA123EET1
Descripción Bias Resistor Transistors
Fabricantes LRC 
Logotipo LRC Logotipo



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No Preview Available ! LDTA123EET1 Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
ƽReduces Board Space
ƽReduces Component Count
ƽThe SC-89 Package can be Soldered using Wave or Reflow.
ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel
ƽThis is Pb-Free Device.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking Package
Shipping
LDTA123EET1G
6H
SC-89
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
PD
RθJA
200 (Note 1)
300 (Note 2)
1.6 (Note 1)
2.4 (Note 2)
400 (Note 2)
mW
mW/°C
°C/W
Junction and Storage
Temperature Range
TJ, Tstg –55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
LDTA123EET1
3
1
2
SC-89
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
3
XX M
12
xx = Specific Device Code
M = Date Code
Version 1.0
LDTA123EET1-1/3

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