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PDF BD439 Datasheet ( Hoja de datos )

Número de pieza BD439
Descripción COMPLEMENTARY SILICON POWER TRANSISTORS
Fabricantes Central Semiconductor 
Logotipo Central Semiconductor Logotipo

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BD439 Hoja de datos, Descripción, Manual
BD439 BD441 NPN
BD440 BD442 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD439, BD440
series types are Complementary Silicon Power
Transistors, manufactured by the epitaxial base process,
designed for medium power, low speed switching
applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (t≤10ms)
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJA
ΘJC
BD439
BD440
BD441
BD442
60 80
60 80
60 80
5.0
4.0
7.0
1.0
36
-65 to +150
100
3.5
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
ICES
IEBO
VCE=Rated VCEO
VEB=5.0V
BVCEO
BVCEO
IC=100mA (BD439, BD440)
IC=100mA (BD441, BD442)
VCE(SAT)
VBE(ON)
IC=2.0A, IB=200mA
VCE=1.0V, IC=2.0A
hFE VCE=5.0V, IC=10mA (BD439, BD440)
hFE VCE=5.0V, IC=10mA (BD441, BD442)
hFE VCE=1.0V, IC=500mA
hFE VCE=1.0V, IC=2.0A (BD439, BD440)
hFE VCE=1.0V, IC=2.0A (BD441, BD442)
fT VCE=1.0V, IC=250mA
MIN
60
80
20
15
40
25
15
3.0
MAX
100
100
1.0
0.8
1.5
UNITS
V
V
V
V
A
A
A
W
°C
°C/W
°C/W
UNITS
μA
μA
mA
V
V
V
V
MHz
R1 (2-February 2009)

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