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PDF K3529-01 Data sheet ( Hoja de datos )
| Número de pieza | K3529-01 | |
| Descripción | MOSFET ( Transistor ) - 2SK3529-01 | |
| Fabricantes | Fuji | |
| Logotipo |  |
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2SK3529-01
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
Ratings
800
Unit
V
VDSX *5
800 V
Continuous drain current
ID
±7 A
Pulsed drain current
ID(puls]
±28 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
7A
Maximum Avalanche Energy
EAS
*1
235.3
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
40 kV/µs
Peak Diode Recovery dV/dt
Max. power dissipation
dV/dt *3
PD Ta=25°C
Tc=25°C
5
2.02
195
kV/µs
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS<= 800V *5 VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=800V VGS=0V Tch=25°C
VDS=640V VGS=0V
VGS=±30V VDS=0V
ID=3.5A VGS=10V
Tch=125°C
ID=3.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V ID=3.5A
VGS=10V
RGS=10 Ω
VCC=400V
ID=7A
VGS=10V
L=8.8mH Tch=25°C
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
800
3.0
4.1
7
Typ.
1.46
8.2
740
105
7
21
8
40
9.6
21.5
3
7
0.90
2.3
7.0
Max. Units
V
5.0 V
25 µA
250
100 nA
1.90 Ω
S
1110
pF
160
10.5
31.5 ns
12
60
14.4
32 nC
4.5
10.5
A
1.50 V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.640 °C/W
62.0 °C/W
1
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| PDF Descargar | [ Datasheet K3529-01.PDF ] | |
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