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PDF K2467 Data sheet ( Hoja de datos )

Número de pieza K2467
Descripción MOSFET ( Transistor ) - 2SK2467
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! K2467 Hoja de datos, Descripción, Manual

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2467
2SK2467
High-Power Amplifier Application
High breakdown voltage: VDSS = 180 V
High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
±20
9
80
150
55 to 150
V
V
A
W
°C
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
Characteristics
Symbol
Test Condition
Drain cut-off current
Gate leakage current
Drain-source breakdown voltage
Drain-source saturation voltage
Gate-source cut-off voltage (Note 3)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
VGS (OFF)
|Yfs|
Ciss
Coss
Crss
VDS = 180 V, VGS = 0
VDS = 0, VGS = ±20 V
ID = 10 mA, VGS = 0
VGS = 10 V, ID = 6 A
VDS = 10 V, ID = 0.1 A
VDS = 10 V, ID = 3 A
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
VDS = 30 V, VGS = 0, f = 1 MHz
Note 3: VGS (OFF) classification Y: 1.4 to 2.8
This transistor is an electrostatic-sensitive device. Plese handle with caution.
Min Typ. Max Unit
― ― 1.0 mA
― ― ±0.5 μA
180
V
2.5 5.0
V
1.4 2.8 V
4.0
S
700
pF
150
pF
90 pF
1 2006-11-21

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