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PDF IPD50R950CE Data sheet ( Hoja de datos )

Número de pieza IPD50R950CE
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IPD50R950CE Hoja de datos, Descripción, Manual

IPD50R950CE,IPU50R950CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.95
ID 6.6 A
Qg,typ
10.5
nC
ID,pulse
12.8
A
Eoss @ 400V
1.28
µJ
Type/OrderingCode
IPD50R950CE
IPU50R950CE
Package
PG-TO 252
PG-TO 251
Marking
50S950CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-06-13

1 page




IPD50R950CE pdf
500VCoolMOSªCEPowerTransistor
IPD50R950CE,IPU50R950CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.83 -
140 -
0.7 -
8.5 -
Unit Note/TestCondition
V VGS=0V,IF=1.6A,Tf=25°C
ns VR=400V,IF=1.6A,diF/dt=100A/µs
µC VR=400V,IF=1.6A,diF/dt=100A/µs
A VR=400V,IF=1.6A,diF/dt=100A/µs
Final Data Sheet
5 Rev.2.3,2016-06-13

5 Page





IPD50R950CE arduino
500VCoolMOSªCEPowerTransistor
IPD50R950CE,IPU50R950CE
6PackageOutlines
*) mold flash not included
MILLIMETERS
INCHES
DIM
MIN MAX MIN MAX
A
2.16
2.41
0.085
0.095
A1
0.00
0.15
0.000
0.006
b
0.64
0.89
0.025
0.035
b2
0.65
1.15
0.026
0.045
b3
5.00
5.50
0.197
0.217
c
0.46
0.60
0.018
0.024
c2
0.46
0.98
0.018
0.039
D
5.97
6.22
0.235
0.245
D1
5.02
5.84
0.198
0.230
E
6.40
6.73
0.252
0.265
E1
4.70
5.60
0.185
0.220
e 2.29 (BSC)
0.090 (BSC)
e1 4.57 (BSC)
0.180 (BSC)
N3
3
H
9.40
10.48
0.370
0.413
L
1.18
1.70
0.046
0.067
L3
0.90
1.25
0.035
0.049
L4
0.51
1.00
0.020
0.039
F1 10.60
0.417
F2 6.40
0.252
F3 2.20
0.087
F4 5.80
0.228
F5 5.76
0.227
F6 1.20
0.047
Figure1OutlinePG-TO252,dimensionsinmm/inches
DOCUMENT NO.
Z8B00003328
SCALE
0
2.0
0 2.0
4mm
EUROPEAN PROJECTION
ISSUE DATE
01-09-2015
REVISION
05
Final Data Sheet
11 Rev.2.3,2016-06-13

11 Page







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