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PDF IPD50N04S4-08 Data sheet ( Hoja de datos )
| Número de pieza | IPD50N04S4-08 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD50N04S4-08
Product Summary
V DS
R DS(on),max
ID
40 V
7.9 mΩ
50 A
PG-TO252-3-313
Type
IPD50N04S4-08
Package
Marking
PG-TO252-3-313 4N0408
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=25A
Avalanche current, single pulse I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
50
47
200
55
50
±20
46
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-04-13
1 page  
IPD50N04S4-08
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
160
10 V
120
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
20
5.5 V
6V
18 6.5 V
16
7 V 14
80
6.5 V
12
7V
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
120
6 V 10
5.5 V
5V
8
10 V
6
34
0 10 20 30 40 50 60 70
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
14
13
100
12
80 11
60
40
20
0
3
175 °C
25 °C
-55 °C
456
V GS [V]
10
9
8
7
6
7
5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2010-04-13
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD50N04S4-08.PDF ] | |
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