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PDF IPD50N04S3-09 Data sheet ( Hoja de datos )
| Número de pieza | IPD50N04S3-09 | |
| Descripción | Power Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD50N04S3-09 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD50N04S3-09
Product Summary
V DS
R DS(on),max
ID
40 V
9 mΩ
50 A
PG-TO252-3-11
Type
IPD50N04S3-09
Package
Marking
PG-TO252-3-11 3N0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.1
page 1
Value
50
43
200
140
50
±20
63
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2009-11-03
1 page  
IPD50N04S3-09
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
200
160 10 V
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
25
5.5 V
6V
23
6.5 V
7 V 21
19
120
6.5 V
17
15
80
6 V 13
7V
11
40
5.5 V
9
5V 7
10 V
05
02468
0 20 40 60 80 100 120
V DS [V]
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
200
-55 °C
25 °C
15
14
160
175 °C
13
12
120 11
10
80 9
8
40 7
0
2345678
V GS [V]
6
5
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.1
page 5
2009-11-03
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD50N04S3-09.PDF ] | |
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