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PDF SC8205 Data sheet ( Hoja de datos )

Número de pieza SC8205
Descripción 20V N-Channel Enhancement-Mode MOSFET
Fabricantes SIKEWEI ELECTRONICS　
Logotipo SIKEWEI ELECTRONICS Logotipo



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No Preview Available ! SC8205 Hoja de datos, Descripción, Manual

深圳市思科微电子有限公司
SHENZHEN SIKEWEI ELECTRONICS CO., LTD.
SC8205(文件编号:S&CIC0692)
20V N-Channel Enhancement-Mode MOSFET
RDS(ON), [email protected], [email protected] = 75mΩ
RDS(ON), [email protected], [email protected] = 38mΩ
RDS(ON), [email protected], [email protected] = 30mΩ
RDS(ON), [email protected], [email protected] = 28mΩ
RDS(ON), Vgs@10V, [email protected] = 25mΩ
Features
¾ Advanced trench process technology
¾ High Density Cell Design For Ultra Low On-Resistance
¾ High Power and Current handing capability
¾ Ideal for Li ion battery pack applications
Internal Schematic Diagram
D ra in 1
D ra in 2
G at e1
G at e2
S ou rc e 1
S ou rc e 2
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
Maximum Power Dissipation
TA = 25℃
TA = 75℃
VDS
VGS
ID
IDM
PD
Operating Junction and Storage Temperature Range
Tj1 Tstg
Junction-to-Ambient Thermal Resistance (PCB mounted)3
ROUA
Note: 1. Fused current that based on wire numbers and diameter
2. Repetitive Rating: Pulse width limited by the maximum junction temperature
3. 1-in2 2oz Cu PCB board
第1页共5页
Limit
20
±12
6
20
2
1.28
-55 to 150
62.5
Umit
V
A
W
℃
℃/W

1 page




SC8205 pdf
深圳市思科微电子有限公司
SHENZHEN SIKEWEI ELECTRONICS CO., LTD.
SC8205(文件编号:S&CIC0692)
第5页共5页

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