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PDF PEMB13 Data sheet ( Hoja de datos )
| Número de pieza | PEMB13 | |
| Descripción | PNP/PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
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PEMB13; PUMB13
PNP/PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 47 k
Rev. 4 — 7 December 2011
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
PEMB13
SOT666 -
PUMB13
SOT363 SC-88
NPN/PNP
complement
PEMD13
PUMD13
NPN/NPN
complement
PEMH13
PUMH13
Package
configuration
ultra small and flat lead
very small
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
R2/R1
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 100 mA
3.3 4.7 6.1 k
8 10 12
1 page  
NXP Semiconductors
PEMB13; PUMB13
PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
006aac751
0
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PEMB13 (SOT666); typical values
103
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.33
0.5
102 0.2
0.1
0.05
0.02
10
0.01
0
006aac750
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 3.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration for
PUMB13 (SOT363); typical values
PEMB13_PUMB13
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 7 December 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PEMB13; PUMB13
PNP/PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
12. Revision history
Table 10. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
PEMB13_PUMB13 v.4
Modifications:
20111207
Product data sheet
-
PEMB13_PUMB13 v.3
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 “Product profile”: updated
• Section 4 “Marking”: updated
• Figure 1 to 9: added
• Section 5 “Limiting values”: updated
• Section 6 “Thermal characteristics”: updated
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to
VI(off) off-state input voltage, ICEO updated, fT added
• Section 8 “Test information”: added
• Section 9 “Package outline”: superseded by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PEMB13_PUMB13 v.3 20040415
Product data sheet
-
PEMB13_PUMB13 v.2
PEMB13_PUMB13 v.2 20031211
Product specification
-
PEMB13 v.1
PEMB13 v.1
20020114
Preliminary specification
-
-
PEMB13_PUMB13
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 7 December 2011
© NXP B.V. 2011. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PEMB13.PDF ] | |
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