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PDF K3747 Data sheet ( Hoja de datos )

Número de pieza K3747
Descripción MOSFET ( Transistor ) - 2SK3747
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! K3747 Hoja de datos, Descripción, Manual

Ordering number : ENN7767
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2SK3747
N-Channel Silicon MOSFET
2SK3747 High-Voltage, High-Speed Switching
Applications
Features
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
Attachment workability is good by Mica-less package.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
*1 VDD=99V, L=20mH, IAV=2A
*2 L20mH, single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3747
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
ID=1mA, VGS=0
VDS=1200V, VGS=0
VGS= ±16V, VDS=0
VDS=10V, ID=1mA
VDS=20V, ID=1A
ID=1A, VGS=10V
Ratings
1500
±20
2
4
3.0
50
150
--55 to +150
42
2
Unit
V
V
A
A
W
W
°C
°C
mJ
A
min
1500
2.5
0.7
Ratings
typ
max
Unit
V
100 µA
±10 µA
3.5 V
1.4 S
10 13
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004QB TS IM TB-00000018 No.7767-1/4

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