|
|
PDF F15NM60N Data sheet ( Hoja de datos )
| Número de pieza | F15NM60N | |
| Descripción | STF15NM60N | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de F15NM60N (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
|
No Preview Available !
STB15NM60N - STF/I15NM60N
STP15NM60N - STW15NM60N
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB15NM60N
STI15NM60N
STF15NM60N
STP15NM60N
STW15NM60N
650V
650V
650V
650V
650V
< 0.299Ω
< 0.299Ω
< 0.299Ω
< 0.299Ω
< 0.299Ω
14A
14A
14A (1)
14A
14A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Application
■ Switching applications
Order codes
Part number
STB15NM60N
STI15NM60N
STF15NM60N
STP15NM60N
STW15NM60N
Marking
B15NM60N
I15NM60N
F15NM60N
P15NM60N
W15NM60N
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
May 2007
Rev 1
1/18
www.st.com
18
1 page  
STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300V, ID = 7A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min Typ Max Unit
12 ns
14 ns
80 ns
30 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 14A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =14A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 14A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
14
56
1.3
390
5
25
500
7
25
A
A
V
ns
µC
A
ns
µC
A
5/18
5 Page 
STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet F15NM60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| F15NM60N | STF15NM60N | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |