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PDF D1890 Data sheet ( Hoja de datos )
| Número de pieza | D1890 | |
| Descripción | Silicon NPN triple diffusion planar type Darlington | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD1890
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1250
s Features
q Optimum for 25W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
100
80
5
6
3
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 100V, IE = 0
VCE = 80V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
IC = 2A, IB = 2mA
IC = 2A, IB = 2mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 2mA, IB2 = –2mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
min
80
2000
5000
typ max Unit
100 µA
100 µA
100 µA
V
30000
2.5 V
3.0 V
20 MHz
3.5 µs
2.5 µs
0.6 µs
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet D1890.PDF ] | |
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