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PDF GA400TD60U Datasheet ( Hoja de datos )

Número de pieza GA400TD60U
Descripción HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

Total 10 Páginas
		
GA400TD60U Hoja de datos, Descripción, Manual
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50059D
GA400TD60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.70V
@VGE = 15V, IC = 400A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
400
800
800
800
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
www.irf.com
Typ.
0.1
400
Max.
0.10
0.20
6.0
5.0
Units
°C/W
N.m
g
1
05/15/02

1 page

GA400TD60U pdf
GA400TD60U
80000
60000
40000
20000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 270A
16
12
8
4
0
0
400
800
1200
1600
2000
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
120 VCC = 360V
VGE = 15V
TJ = 125 °C
IC = 400A
100
80
60
1000 RGG1=1=5Oh;RmG2 = 0
VGE = 15V
VCC = 360V
100
IC = 800 A
IC = 400 A
IC = 200 A
40
0
10 20 30 40 50
RG , Gate Resistance (O(hm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

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