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PDF K2275 Data sheet ( Hoja de datos )
| Número de pieza | K2275 | |
| Descripción | MOSFET ( Transistor ) - 2SK2275 | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K2275 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-state Resistance
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A)
• LOW Ciss Ciss = 1 000 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±3.5
A
Drain Current (pulse)
ID (pulse)* ±14
A
Total Power Dissipation (TC = 25 °C) PT1
35 W
Total Power Dissipation (Ta = 25 °C) PT2
2.0 W
Storage Temperature
Tstg –55 to +150 °C
Channel Temperature
Tch 150 °C
Single Avalanche Current
IAS**
3.5
A
Single Avalanche Energy
EAS**
22
mJ
*PW ≤ 10 µs, Duty Cycle ≤ 1%
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
123
0.7 ± 0.1
2.54 TYP.
1.3 ± 0.2 0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
2.5 ± 0.1
123
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Gate (G)
Body diode
Source (S)
Document No. TC-2510
(O.D. No. TC–8069)
Date Published February 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8.0
VGS = 10 V
7.0 ID = 3.0 A
Pulsed
6.0
5.0
4.0
3.0
2.0
1.0
0
–50 –25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0
1 000
Ciss
100
Crss
Coss
10
1 10 100 1 000
VDS - Drain to Source Voltage - v
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600 12
ID = 3.5 A
500
VDD = 450 V
400 300 V
150 V
10
VGS 8
300 6
200 4
100 VDS
2
00
0 10 20 30 40 50
Qg - Gate Charge - nC
2SK2275
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
20
Pulsed
10
1
VGS = 0
0.1
0
VGS = 10 V
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source to Drain Voltage - V
1.4
SWITCHING CHARACTERISTICS
200
100
td (off)
tr
tf
td (on)
10
3
0.1
VGS = 10 V→0
RG = 10 Ω
VDD = 150 V
1 10
ID - Drain Current - A
3 000
1 000
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
di/dt = 50 A/ µ s
VGS = 0
100
30
0.1
1 10
Diode Forward Current - A
30
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2275.PDF ] | |
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