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PDF VS-6CWH02FNHM3 Data sheet ( Hoja de datos )
| Número de pieza | VS-6CWH02FNHM3 | |
| Descripción | Ultrafast Rectifier ( Diode ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-6CWH02FNHM3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt®
D-PAK (TO-252AA)
Base
common
cathode
4
2
Common
cathode
13
Anode
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
D-PAK (TO-252AA)
2x3A
200 V
1.0 V
See Recovery table
175 °C
Common cathode
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
Vishay Semiconductors’ 200 V series are the state of the art
hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output
rectification stage of SMPS, UPS, DC/DC converters as well
as freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
Average rectified forward current per device
Non-repetitive peak surge current
VRRM
IF(AV)
IFSM
Peak repetitive forward current per diode
IFM
Operating junction and storage temperatures TJ, TStg
TEST CONDITIONS
Total device, rated VR, TC = 159 °C
Rated VR , square wave, 20 kHz, TC = 159 °C
MAX.
200
6
50
6
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
IF = 3 A
Forward voltage
IF = 3 A, TJ = 125 °C
VF
IF = 6 A
IF = 6 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
Junction capacitance
CT VR = 200 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
12
8.0
MAX.
-
1
0.9
1.2
1.08
5
100
-
-
UNITS
V
μA
pF
nH
Revision: 02-Aug-12
1 Document Number: 94743
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-6CWH02FNHM3
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 02-Aug-12
5 Document Number: 94743
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
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