PDF VS-6CWH02FN-M3 Data sheet ( Hoja de datos )

Número de pieza	VS-6CWH02FN-M3
Descripción	Ultrafast Rectifier ( Diode )
Fabricantes	Vishay
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No Preview Available ! VS-6CWH02FN-M3 Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt® D-PAK (TO-252AA) Base common cathode 4 2 Common cathode 13 Anode Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation D-PAK (TO-252AA) 2x3A 200 V 1.0 V See Recovery table 175 °C Common cathode FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION/APPLICATIONS Vishay Semiconductors’ 200 V series are the state of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current per device Non-repetitive peak surge current Peak repetitive forward current per diode Operating junction and storage temperatures VRRM IF(AV) IFSM IFM TJ, TStg TEST CONDITIONS Total device, rated VR, TC = 159 °C Rated VR , square wave, 20 kHz, TC = 159 °C MAX. 200 6 50 6 - 65 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA IF = 3 A Forward voltage IF = 3 A, TJ = 125 °C VF IF = 6 A IF = 6 A, TJ = 125 °C Reverse leakage current VR = VR rated IR TJ = 125 °C, VR = VR rated Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body MIN. 200 - - - - - - - - TYP. - - - - - - - 12 8.0 MAX. - 1 0.9 1.2 1.08 5 100 - - UNITS V μA pF nH Document Number: 93498 For technical questions within your region, please contact one of the following: Revision: 31-Mar-11 [email protected], [email protected], [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page VS-6CWH02FN-M3 Ultrafast Rectifier, 2 x 3 A FRED Pt® Vishay Semiconductors VR = 200 V L = 70 μH 0.01 Ω D.U.T. dIF/dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit IF 0 (3) trr ta tb (2) IRRM (4) Qrr 0.5 IRRM dI(rec)M/dt (5) (1) dIF/dt 0.75 IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93498 For technical questions within your region, please contact one of the following: Revision: 31-Mar-11 [email protected], [email protected], [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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