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PDF GA100TS60SQ Data sheet ( Hoja de datos )
| Número de pieza | GA100TS60SQ | |
| Descripción | HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Bulletin I27119 rev. B 06/02
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 Standard Speed IGBT
Technology
• QuietIR Antiparallel diodes with Fast
Soft recovery
• Very Low Conduction Losses
• Industry Standard Package
• Aluminum Nitride DBC
• UL approved (file E78996)
GA100TS60SQ
Standard Speed IGBT
VCES = 600V
IC = 220A DC
VCE(on) typ. = 1.39V
@ IC = 200A TJ = 25°C
Benefits
• Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 130°C
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
www.irf.com
Max
600
220
100
440
440
± 20
2500
780
312
Units
V
A
V
W
1
1 page  
1000
100
Tj = 125˚C
Tj = 25˚C
10
0.6
0.8 1 1.2 1.4
Forward Voltage Drop- VFM (V)
1.6
Fig. 8 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
140
Vr = 200V
120
100 If = 50A, Tj = 125˚C
80
60
40 If = 50A, Tj = 25˚C
20
0
0 200 400 600 800 1000
dif /dt - A/µs
Fig. 10 - Typical Reverse Recovery Current
vs. dif /dt
www.irf.com
GA100TS60SQ
Bulletin I27119 rev. B 06/02
500
Vr = 200V
450
400 If = 50A, Tj = 125˚C
350
300
250
If = 50A, Tj = 25˚C
200
150
0
200 400 600 800 1000
dif /dt - A/µs
Fig. 9 - Typical Reverse Recovery vs. dif /dt
20
Vr = 200V
15 I F = 50A, Tj = 125˚C
10
5 I F= 50A, Tj = 25˚C
0
0 200 400 600 800 1000
dif /dt - A/µs
Fig. 11 - Typical Stored Charge vs. dif /dt
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GA100TS60SQ.PDF ] | |
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