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PDF K2789 Datasheet ( Hoja de datos )

Número de pieza K2789
Descripción 2SK2789
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo

Total 6 Páginas
		
K2789 Hoja de datos, Descripción, Manual
2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2789
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drainsource ON resistance : RDS (ON) = 66 m(typ.)
l High forward transfer admittance : |Yfs| = 16 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 100 V)
l Enhancementmode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
100
100
±20
27
108
60
193
27
6
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.08
83.3
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 428 µH, IAR = 27 A, RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-06-27

1 page

K2789 pdf
2SK2789
RG = 25
VDD = 25 V, L = 428 µH
EAS
=
1
2
× L × I2
× çæ
è
BVDSS
BVDSS - VDD
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5 2002-06-27

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