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PDF YC448 Data sheet ( Hoja de datos )
| Número de pieza | YC448 | |
| Descripción | Power Thyristor | |
| Fabricantes | RAE | |
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Technical Data : CD-069
Page 1 of 3
RAE
YC448 - Power Thyristor
600 - 1400 VDRM; 1000A rms
**********************************************************************************************************
HIGH POWER THYRISTOR FOR INVERTER APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Blocking capabilty up to 1400 volts
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
CASE 3T
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
YC448M
YC448N
YC448 P
YC448PB
YC448PD
600
800
1000
1200
1400
600
800
1000
1200
1400
720
960
1150
1300
1500
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
IRRM / IDRM
15 mA
leakage and off state leakage
35 mA (3)
Critical rate of voltage rise dV/dt (4)
500 V/μsec
Conducting - on state
Parameter
Average value of on-state current
RMS value of on-state current
Peak one cycle surge
(non repetitive) current
I square t
Latching current
Holding current
Peak on-state voltage
Critical rate of rise of on-state
current (5, 6)
Critical rate of rise of on-state
current (6)
Symbol
IT(AV)
ITRMS
Min.
ITSM
I2t
IL
IH
VTM
di/dt
di/dt
Max. Typ.
625
1000
10000
9100
415000
400
400
2.9
800
400
Notes:
All ratings are specified for Tj=25 oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range -40 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) Minimum value for linear and exponential
waveshape to 80% rated VDRM. Gate open.
Tj = 125 oC.
(5) Non-repetitive value.
(6) The value of di/dt is established in accordance
with EIA/NIMA Standard RS-397, Section
5-2-2-6. The value defined would be in addi-
tion to that obtained from a snubber circuit,
comprising a 0.2 μF capacitor and 20 ohms
resistance in parallel with the thristor under
test.
Units
A
A
Conditions
Sinewave,180o conduction,Tc=65oC
Nominal value
A
A
A2s
mA
mA
V
A/μs
A/μs
8.3 msec (60Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
8.3 msec
VD = 24 V; RL= 12 ohms
VD = 24 V; I = 2.5 A
ITM =2000 A; Tj = 125 oC
Switching from VDRM ≤ 1000 V,
non-repetitive
Switching from VDRM ≤ 1000 V
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