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PDF FSU04N60A Data sheet ( Hoja de datos )
| Número de pieza | FSU04N60A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | IPS | |
| Logotipo |  |
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FSU04N60A
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• TV Main Power
• SMPS Power Supply
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• ESD improved Capability
Ordering Information
PART NUMBER
FSU04N60A
PACKAGE
TO-251
BRAND
FSU04N60A
VDSS
600 V
RDS(ON) (Typ.)
1.9 :
G
D
S
TO-251
Not to Scale
ID
4A
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FSU04N60A
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4*
2.9
16
86
0.69
V
A
W
W/oC
VGS Gate-to-Source Voltage
EAS
Single Pulse Avalanche Engergy
L=10 mH
± 20
300
V
mJ
IAS
dv/dt
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
Figure 16
5.0
A
V/ ns
VESD(G-S)
Gate to Source ESD (HBM-C=100pF,
R=1.5K:
3000
V
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
300
260
oC
TJ and TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RTJC
RTJA
Junction-to-Case
Junction-to-Ambient
FSU04N60A
1.45
62.5
Units Te s t C o n d i t i ons
oC/W
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 9
FSA04N60A REV. A. Aug. 2009
1 page  
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25ć DERATE PEAK
CURRENT AS FOLLOWS:
I
ª
I 25 «
¬
150 TC
125
º
»
¼
10
1
1.00E-05
1.00E-04
9
PULSE DURATION = 10s
7.5 DUTY CYCLE = 0.5%MAX
VDS=30V
6
4.5
-55ć
3 ć
ć
1.5
1.00E-03
1.00E-02
t ˈPulse Width , Seconds
Figure 6 Maximun Peak Current Capability
6
1.00E-01
5
4
3
2
1
1.00E+00
1.00E+01
PULSE DURATION = 10s
DUTY FACTOR = 0.5%MAX
Tc =25 ć
ID= 4A
ID= 2A
ID= 1A
0
2345
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
3
PULSE DURATION = 10s
DUTY CYCLE= 0.5%MAX
Tc =25 ć
2.5
0
64
6 8 10 12
Vgs , Gate to Source VoltageˈVolts
14
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10s
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
VGS=20V
1.75
2 1.5
1.25
1.5 1
0.75
1
0123
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
4
0.5
-50
Figure
0 50 100 150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
©2009 InPower Semiconductor Co., Ltd.
Page 5 of 9
FSU04N60A REV. A. Aug. 2009
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FSU04N60A.PDF ] | |
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