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PDF FTU04N60 Data sheet ( Hoja de datos )

Número de pieza FTU04N60
Descripción 600V N-Channel MOSFET
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No Preview Available ! FTU04N60 Hoja de datos, Descripción, Manual

600V N-Channel MOSFET
General Features
¾ Low ON Resistance
¾ Low Gate Charge (typical 14.7nC)
¾ Fast Switching
¾ 100% Avalanche Tested
¾ RoHS Compliant/Lead Free
FTU04N60/FTD04N60
BVDSS
600V
RDS(ON) (Max.)
2.8
ID
3.6A
Applications
¾ High Efficiency SMPS
¾ Adaptor/Charger
¾ Active PFC
¾ LCD Panel Power
Ordering Information
Part Number Package
FTU04N60
TO-251
FTD04N60
TO-252
Marking
FTU04N60
FTD04N60
Absolute Maximum Ratings
TC=25unless otherwise specified
Symbol
VDSS
ID
ID@100
IDM
PD
VGS
EAS
dv/dt
TL
Parameter
Drain-to-Source Voltage[1]
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@10V[2]
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=28mH, ID=3.6A
Peak Diode Recovery dv/dt[3]
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
TJ and TSTG Operating and Storage Temperature Range
FTU04N60
FTD04N60
600
3.6 3.6*
Figure 3
Figure 6
89.3
0.71
±30
181
4.5
300
-55 to 150
Unit
V
A
W
W/
V
mJ
V/ns
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FTU04N60
FTD04N60
1.4
100
Unit
/W
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m
1/12
Rev. 2.0 Mar. 2010

1 page




FTU04N60 pdf
FTU04N60/FTD04N60
Figure 6. Maximum Peak Current Capability
100
Transconductance may limit current in this region
10
1
0.00001
0.0001
0.001
tP, Pu0ls.0e1Width(s) 0.1
1
10
Figure 7. Typical Transfer Characteristics
7
-55
6
5
25
4
3 150
2
1
0
3 4 VGS, Gate5-to-Source V6oltage,(V) 7
Figure 8. Unclamped Inductive Switching Capability
100
10
Starting TJ=25
1 Starting TJ=150
0.1
0.01
8 1.E-06
1.E-05 tAV1, .TEi-m04e in Av1a.lEan-0c3he(s) 1.E-02
1.E-01
Figure 9. Typical Drain-to-Source ON Resistance
7
6
5
VGS=10V
VGS=20V
4
3
2
0 2 4 6 8 10 12 14
ID, Drain Current(A)
Figure 10. Typical Drain-to-Source On Resistance
vs. Junction Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature ()
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m
5/12
Rev. 2.0 Mar. 2010

5 Page





FTU04N60 arduino
FTU04N60/FTD04N60
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o. c o m
11/12
Rev. 2.0 Mar. 2010

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