DataSheet.es    

PDF FTW20N50A Data sheet ( Hoja de datos )

Número de pieza FTW20N50A
Descripción N-Channel MOSFET
Fabricantes IPS 
Logotipo IPS Logotipo



Total 10 Páginas
		
FTW20N50A Hoja de datos, Descripción, Manual
FTW20N50A
General Description˖
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features˖
z Fast Switching
z Low ON Resistance(RdsoQİŸ
z Low Gate Charge (Typical Data:130nC)
z Low Reverse transfer capacitances(Typical:65pF)
z 100% Single Pulse avalanche energy Test
Applications˖
Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless otherwise specified˅˖
VDSS
ID
PD (TC=25ć)
RDS(ON)
TO–3P(N)
500
20
230
0.26
V
A
W
Ÿ
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJˈTstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
500
20
12
80
f30
950
90
14
4.0
230
1.85
150ˈ–55 to 150
FTP04N 300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/ć
ć
ć
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 10
FTW20N50A REV. A. Jul. 2009

1 page

FTW20N50A pdf




 1000
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25ć DERATE PEAK
CURRENT AS FOLLOWS:
I
ª
I 25 «
¬
150  TC
125
º
»
¼
10
1.00E-05
100
10
1
0.1
2
3
1.00E-04
1.00E-03
1.00E-02
t ˈPulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
1.4
PULSE DURATION = 250­s
DUTY CYCLE = 0.5%MAX
VDS=50V
1.2
1
0.8
0.6
1.00E+00
1.00E+01
PULSE DURATION = 10­s
DUTY FACTOR = 0.5%MAX
Tc =25 ć
ID=20A
ID=10A
ID=5A
+150ć
ć
ć
456789
Vgs , Gate to Source Voltage , Volts
10
0.4
0.2
0
4
6 8 10 12
Vgs , Gate to Source Voltage ˈVolts
14
Figure 7 Typical Transfer Characteristics
0.8
PULSE DURATION = 10­s
DUTY CYCLE= 0.5%MAX
Tc =25 ć
0.6
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
3 and Drain Current
VGS=10V ID=10A
2.5
2
0.4
VGS=10V
1.5
VGS=20V
1
0.2
0.5
0
0 20 40 60 80
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0
-100
-50 0
50 100 150
Tj, Junction temperature , C
200
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
©2009 InPower Semiconductor Co., Ltd.
Page 5 of 10
FTW20N50A REV. A. Jul. 2009

5 Page



PáginasTotal 10 Páginas
PDF Descargar[ Datasheet FTW20N50A.PDF ]

Enlace url


Hoja de datos destacado

Número de piezaDescripciónFabricantes
FTW20N50AN-Channel MOSFETIPS
IPS

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


www.DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar