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PDF GF2304 Data sheet ( Hoja de datos )

Número de pieza GF2304
Descripción N-Channel Enhancement-Mode MOSFET
Fabricantes General Semiconductor 
Logotipo General Semiconductor Logotipo



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GF2304
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 0.117ID 2.5A
TO-236AB (SOT-23)
.118 (3.0)
.110 (2.8)
.020 (0.51)
.015 (0.37)
3
12
.041 (1.03) .041 (1.03)
.035 (0.89) .035 (0.89)
Top View
TGREENNCFHET®
0.031 (0.8)
0.035 (0.9)
Pin Configuration
1. Gate
2. Source
3. Drain
Dimensions in inches
and (millimeters)
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
Mounting Pad Layout
.020 (0.51) .020 (0.51)
.015 (0.37) .015 (0.37)
.098 (2.5)
.091 (2.3)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 04
Features
• Advanced trench process technology
• High density cell design for ultra-low on-resistance
• Popular SOT-23 package with copper lead-frame
for superior thermal and electrical capabilities
• Compact and low profile
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source-Voltage
Continuous Drain Current TJ = 150°C
Pulsed Drain Current(1)
Maximum Power Dissipation(2)
TA = 25°C
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance(2)
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
30
± 20
2.5
10
1.25
0.80
–55 to +150
100
Notes:
(1) Pulse width limited by maximum junction temperature.
(2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu)
Unit
V
V
A
A
W
°C
°C/W
5/3/01

1 page




GF2304 pdf
GF2304
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 On-Resistance vs.
Junction Temperature
1.8
VGS = 10V
1.6 ID = 2.5A
1.4
1.2
1.0
0.8
0.6
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
Single Pulse
0.001
0.0001 0.001 0.01
t1
t2
1. Duty Cycle, D = t1/t2
2. RθJA (t) = RθJA(norm) *RθJA
3. RθJA = 100°C/W
4. TJ - TA = PDM * RθJA (t)
0.1 1 10 100
Pulse Duration (sec.)
Fig. 12 Power vs. Pulse Duration
20
Single Pulse
RθJA = 100°C/W
TA = 25°C
15
10
5
0
0.001
0.01
0.1
1
Pulse Duration (sec.)
10
100
Fig. 13 Maximum Safe Operating Area
100
10 100µs
1
RDS(ON) Limit
1s
VGS = 10V
0.1 Single Pulse
RθJA = 100°C/W
TA = 25°C
DC
1ms
1001m0ms s
0.01
0.1
1
10
VDS -- Drain-Source Voltage (V)
100

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