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PDF MDD1502 Data sheet ( Hoja de datos )
| Número de pieza | MDD1502 | |
| Descripción | Single N-channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDD1502
Single N-channel Trench MOSFET 30V, 45.7A, 8.5mΩ
General Description
The MDD1502 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1502 is suitable device for DC to DC
converter and general purpose applications.
Features
VDS = 30V
ID = 45.7A @VGS = 10V
RDS(ON) (MAX)
< 8.5mΩ @VGS = 10V
< 13.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
45.7
36.6
20.4(3)
16.3(3)
100
31.2
20.0
6.2(3)
4.0(3)
47
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version 1.2
1
Symbol
RθJA
RθJC
Rating
20.0
4.0
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
May. 2011. Version 1.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDD1502.PDF ] | |
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