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PDF DPG60C400QB Data sheet ( Hoja de datos )

Número de pieza DPG60C400QB
Descripción High Performance Fast Recovery Diode
Fabricantes IXYS 
Logotipo IXYS Logotipo



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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG60C400QB
1 23
DPG60C400QB
VRRM
I FAV
t rr
= 400 V
= 2x 30 A
= 45 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-3P
Industry standard outline
compatible with TO-247
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

1 page




DPG60C400QB pdf
DPG60C400QB
Fast Diode
80
70
60
50
IF 40
[A] 30
20
10
TVJ = 150°C
25°C
1.0
TVJ = 125°C
VR = 270 V
0.8
Qrr
0.6
[μC]
0.4
60 A
30 A
15 A
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.2
0
200 400 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
20
TVJ = 125°C
VR = 270 V
16
IRR
12
[A]
8
60 A
30 A
15 A
4
0 200 400 600
-diF /dt [A/μs]
Fig. 3 Typ. reverse recovery current
IRR versus -diF /dt
1.6
1.4
1.2
1.0
Kf 0.8
0.6 IRR
0.4
0.2 Qrr
140
120
100
trr
[ns] 80
60
TVJ = 125°C
VR = 270 V
15 A
30 A
60 A
700
600
tfr
TVJ = 125°C
VR = 270 V
IF = 30 A
500
tfr 400
[ns] 300
200
100
16
VFR
14
12
10
VFR
8
[V]
6
4
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
40
0 200 400 600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
02
0 200 400 600
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR & time tfr versus diF /dt
50
TVJ = 125°C
VR = 270 V
40
60 A
30 A
1.0
0.8
30
Erec
20
[μJ]
10
15 A ZthJC 0.6
[K/W] 0.4
0.2
0
0 200 400 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal impedance junction to case
1000 0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a

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