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PDF IRFR1018EPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFR1018EPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97129
IRFR1018EPbF
IRFU1018EPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
max. 8.4m:
G
ID (Silicon Limited)
79A c
S ID (Package Limited)
56A
D-Pak
I-Pak
IRFR1018EPbF IRFU1018EPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
RθJA
Junction-to-Case k
Junction-to-Ambient (PCB Mount) jk
Junction-to-Ambient k
Notes through are on page 2
www.irf.com
D
Drain
Max.
79c
56c
56
315
110
0.76
± 20
21
-55 to + 175
300
S
Source
Units
A
W
W/°C
V
V/ns
°C
88
47
11
Typ.
–––
–––
–––
Max.
1.32
40
110
mJ
A
mJ
Units
°C/W
1
3/8/08
1 page  
IRFR/U1018EPbF
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τC
Ri (°C/W)
0.026741
τι (sec)
0.000007
τ3 τ4 τ 0.28078 0.000091
τ3 τ4 0.606685 0.000843
0.406128 0.005884
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
100
TOP
Single Pulse
BOTTOM 10% Duty Cycle
80 ID = 47A
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFR1018EPbF.PDF ] | |
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