|
|
PDF IKW50N65F5A Data sheet ( Hoja de datos )
| Número de pieza | IKW50N65F5A | |
| Descripción | IGBT | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IKW50N65F5A (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65F5A
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page  
IKW50N65F5A
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=25.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.66 2.10
1.90 -
V
- 2.03 -
-
-
1.54 1.80
1.52 -
V
- 1.49 -
3.2 4.0 4.8 V
- - 40.0 µA
- 1200.0 -
- - 100 nA
- 62.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 2800 -
- 65 - pF
- 11 -
- 108.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 21 - ns
- 12 - ns
- 156 - ns
- 6 - ns
- 0.49 - mJ
- 0.14 - mJ
- 0.63 - mJ
5 Rev.2.1,2015-01-15
5 Page 
IKW50N65F5A
Highspeedswitchingseriesfifthgeneration
1.0
Eoff
0.9
Eon
Ets
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
1.2
Eoff
1.1 Eon
Ets
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
100
6
4 10
2
0
0 20 40 60 80 100
QG,GATECHARGE[nC]
Figure 15. Typicalgatecharge
(IC=50A)
1
120 0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11 Rev.2.1,2015-01-15
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKW50N65F5A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IKW50N65F5 | IGBT | Infineon Technologies |
| IKW50N65F5A | IGBT | Infineon Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |