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PDF FZT796 Data sheet ( Hoja de datos )
| Número de pieza | FZT796 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
FZT796A
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt VCEO
* Gain of 250 at IC=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE - FZT696B
PARTMARKING DETAIL - FZT796A
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-200 V
Collector-Emitter Voltage
VCEO
-200 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Current
ICM -1 A
Continuous Collector Current
IC
-0.5 A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
V(BR)CEO
-200
-200
V IC=-100µA
V IC=-10mA*
Emitter-Base
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off Current
ICBO
-0.1 µA VCB=-150V
Emitter Cut-Off Current
IEBO
-0.1 µA VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2 V
-0.3 V
-0.3 V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
Base-EmitterSaturationVoltage VBE(sat)
-0.95 V
IC=-200mA,IB=-20mA*
Base-EmitterTurn-OnVoltage VBE(on)
-0.67
V IC=-200mA,VCE=-10V*
Static Forward Current
Transfer Ratio
hFE 300
300
250
100
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
Transition Frequency
fT 100
MHz IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
toff
225
12
100
3200
pF VEB=-0.5V, f=1MHz
pF VCB=-10V, f=1MHz
ns IC=-100mA, IB1=-10mA
ns IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 255
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| Páginas | Total 2 Páginas | |
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