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PDF FZT751 Data sheet ( Hoja de datos )
| Número de pieza | FZT751 | |
| Descripción | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
FZT751
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
C
E
COMPLEMENTARY TYPE FZT651
PARTMARKING DETAIL FZT751
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80 V
Collector-Emitter Voltage
VCEO
-60 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Current
ICM -6 A
Continuous Collector Current
IC -3 A
Power Dissipation at Tamb=25°C
Ptot 2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
IEBO
VCE(sat)
VBE(sat)
-0.15
-0.45
-0.9
-0.1
-10
-0.1
0.3
0.6
-1.25
µA
µA
µA
V
V
V
VCB=-60V
VCB=-60V,Tamb=100°C
VEB=-4V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8 -1.0 V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
70 200
100 200 300
80 170
40 150
IC=-50mA, VCE =-2V*
IC=-500mA, VCE =-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE =-2V*
Transition Frequency
fT
100 140
MHz
IC=-100mA, VCE=-5V
f=100MHz
Switching Times
ton
40 ns
toff 450 ns
Output Capacitance
Cobo
30 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
IC=-500mA, VCC =-10V
IB1=IB2=-50mA
VCB=-10V, f=1MHz
3 234
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT751.PDF ] | |
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