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PDF FZT749 Data sheet ( Hoja de datos )
| Número de pieza | FZT749 | |
| Descripción | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT749
ISSUE 4 - NOVEMBER 1995
FEATURES
* 25 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
* Excellent hFE specified up to 6A (pulsed).
COMPLEMENTARY TYPE FZT649
PARTMARKING DETAIL FZT749
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-35 V
Collector-Emitter Voltage
VCEO
-25 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Current
ICM -8 A
Continuous Collector Current IC -3 A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off
Currents
Saturation Voltages
Base-Emitter
Turn-On Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-35
-25
-5
IEBO
VCE(sat)
VBE(sat)
VBE(on)
-0.12
-0.40
-0.9
-0.8
-0.1
-10
-0.1
-0.3
-0.6
-1.25
-1.0
V
V
V
µA
µA
µA
V
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-30V
VCB=-30V,Tamb=100°C
VEB=4V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
70 200
100 200 300
75 150
15 50
IC=-50mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
100 160
MHz
IC=-100mA, VCE=-5V
f=100MHz
Output Capacitance
Cobo
55 100 pF
Switching Times
ton
40 ns
toff 450 ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB=-10V f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
3 - 232
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT749.PDF ] | |
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