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PDF FZT657 Data sheet ( Hoja de datos )
| Número de pieza | FZT657 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
FZT657
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
300 V
Collector-Emitter Voltage
VCEO
300 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 1 A
Continuous Collector Current
IC 0.5 A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 300
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 300
V IC=10mA*
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA
Collector Cut-Off Current ICBO
0.1 µA VCB=200V
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
40
50
30
0.1 µA
0.5 V
1.0 V
1.0 V
MHz
Output Capacitance
Cobo
20 pF
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 213
VEB=3V
IC=100mA, IB=10mA*
IC=100mA, IB=10mA*
IC=100mA, VCE =5V*
IC=10mA, VCE =5V*
IC=100mA, VCE =5V*
IC=10mA, VCE=20V
f=20MHz
VCB =20V, f=1MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT657.PDF ] | |
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