(PDF) FZT649 Datasheet - NPN Low Saturation Transistor

Número de pieza	FZT649
Descripción	NPN Low Saturation Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Discrete Power & Signal Technologies July 1998 FZT649 C E C B SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter FZT649 VCEO Collector-Emitter Voltage 25 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 35 5 IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 3 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V V V A °C NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD RθJA Total Device Dissipation Thermal Resistance, Junction to Ambient Max FZT649 2 62.5 Units W °C/W © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt649.lwpPrNC 7/10/98 revB 1 page

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