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PDF FZT603 Data sheet ( Hoja de datos )
| Número de pieza | FZT603 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FZT603 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful hFE up to 6A
* Fast Switching
PARTMARKING DETAIL DEVICE TYPE IN FULL
FZT603
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
100 V
Collector-Emitter Voltage
VCEO
80 V
Emitter-Base Voltage
VEBO
10 V
Peak Pulse Current
ICM 6 A
Continuous Collector Current IC 2 A
Power Dissipation
Ptot 2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
100 240
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80 110
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 10 16
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
ICES
VCE(sat)
Tj=150°C
0.01 µA
10 µA
0.1 µA
10 µA
0.79 0.88 V
0.80 0.90 V
0.88 1.00 V
0.99 1.13 V
0.86 V
VCB=80V
VCB=80V, Tamb=100°C
VEB=8V
VCES=80V
IC=0.25A, IB=0.25mA*
IC=0.4A, IB=0.4mA*
IC=1A, IB=1mA*
IC=2A, IB=20mA*
IC=2A, IB=20mA
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FZT603.PDF ] | |
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