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PDF FZT491 Data sheet ( Hoja de datos )
| Número de pieza | FZT491 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995 7
FZT489
C
COMPLEMENTARY TYPE FZT589
PARTMARKING DETAIL FZT489
E
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50 V
Collector-Emitter Voltage
VCEO
30 V
Emitter-Base Voltage
VEBO
5V
Continuous Collector Current IC 1 A
Peak Pulse Current
ICM 4 A
Base Current
IB 200 mA
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-55 to +150
°C
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
50
30
5
V
V
V
100 nA
100 nA
100 nA
0.3 V
0.6 V
1.1 V
IC=100µA
IC=10mA*
IE=100µA
VCB=30V
VCES=30V
VEB=4V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0 V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
Transition Frequency
hFE 100
100 300
60
20
IC=1mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=4A, VCE=2V*
fT 150
MHz
IC=50mA, VCE=10V
f=100MHz
Collector-Base
Breakdown Voltage
Cobo
10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT449 datasheet
3 - 188
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