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PDF FYPF2010DN Data sheet ( Hoja de datos )
| Número de pieza | FYPF2010DN | |
| Descripción | 20A SCHOTTKY BARRIER RECTIFIER | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FYPF2010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
• Polarity protection
12 3
TO-220F
1. Anode 2.Cathode 3. Anode
20A SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted
Symbol
Parameter
Value
VRRM
VR
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Maximum Average Rectified Current
@ TC = 105°C
Maximum Forward Surge Current (per diode)
60Hz Single Half-Sine Wave
100
100
20
150
TJ, TSTG
Operating Junction and Storage Temperature
-65 to +150
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
2.8
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted
Symbol
Parameter
Min. Typ.
VFM *
IRM *
Maximum Instantaneous Forward Voltage
IF = 10A
IF = 10A
IF = 20A
IF = 20A
Maximum Instantaneous Reverse Current
(per diode)
@ rated VR
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
-
-
-
-
-
-
-
-
-
-
-
-
Max.
0.77
0.65
-
0.75
0.1
20
Units
V
V
A
A
°C
Units
°C/W
Units
V
mA
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FYPF2010DN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FYPF2010DN | 20A SCHOTTKY BARRIER RECTIFIER | Fairchild Semiconductor |
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