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PDF 12SQ045 Data sheet ( Hoja de datos )
| Número de pieza | 12SQ045 | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
10SQ030 thru
10SQ100
Schottky Barrier Rectifier, 10.0 A
Features
• Diffused junction
• Low cost
• Low reverse leakage current
• High surge current capability & low forward voltage drop
• Polarity: Color Band denotes Cathode
• High efficiency
Mechanical Data
• Case: JEDEC R-6 molded plastic
• Polarity: Color band denotes cathode
• Weight: 2.1 grams
• Mounting position: Any
Thermal Specifications (TC = 25oC unless otherwise specified)
Parameters
Symbol Values
Maximum operating junction temperature range TJ -55 to +150
Maximum storage temperature range
TSTG -55 to +150
Typical thermal resistance junction to case
RθJC 3.0
Units
oC
oC
oC/W
JEDEC R-6
Electrical Characteristics (TC = 25oC unless otherwise specified)
Parameter
Symbol 12SQ030 12SQ035 12SQ040
Maximum repetitive peak
reverse voltage
VRRM
30
35
40
Maximum RMS voltage
VRMS
21
24.5
28
Maximum DC blocking
voltage
VDC 30
35
40
Maximum average
forward output current @
TC = 950C
Peak forward surge
current (8.3ms) single half
sine-wave superimposed
on rated load
IF(AV)
IFSM
Forward voltage drop @
10A DC (Note 1)
VF
0.55
Typical junction
capacitance (Note 2)
CJ
Maximum DC
reverse current
at rated DC
blocking voltage
TA =
250C
TA =
1000C
IR
NOTES:
(1) 300 µs, pulse width, 2% duty cycle
(2) Measured at 1.0 MHz and reverse voltage of 4.0 VDC.
12SQ045 12SQ050 12SQ060
45 50 60
31.5 35
42
45 50 60
10
275
0.7
450
0.5
50
12SQ080 12SQ100
80 100
56 70
80 100
0.8
Units
V
V
V
A
A
V
pF
mA
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 12SQ045.PDF ] | |
Hoja de datos destacado
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