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PDF FXT605 Data sheet ( Hoja de datos )
| Número de pieza | FXT605 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FXT605 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
FXT605
ISSUE 1 SEPT 93
FEATURES
* 120 Volt VCEO
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX605 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
BC
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140 V
Collector-Emitter Voltage
VCEO
120 V
Emitter-Base Voltage
VEBO
10 V
Peak Pulse Current
ICM 4 A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb = 25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 140
V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 120
V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
V IE=100µA, IC=0
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Colllector-Emitter
Cut-Off Current
ICES
0.01
10
0.1
10
µA
µA
µA
µA
VCB=120V, IE=0
VCB=120V,Tamb=100°C
VEB=8V, IC=0
VCES=120V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
1.0 V
1.5 V
1.8 V
IC=0.25A, IB=0.25mA*
IC=1A, IB=1mA*
IC=1A, IB=1mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.7 V
IC=1A, VCE=5V*
Static Forward Current hFE
Transfer Ratio
Transition
Frequency
fT
2000
5000
2000
500
150
100K
MHz
IC=50mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=100mA, VCE=10V
f=20MHz
* Measured under pulse conditions. Pulse width=300µs. Duty cycle ≤2%
3-44
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FXT605.PDF ] | |
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