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PDF K1398 Data sheet ( Hoja de datos )
| Número de pieza | K1398 | |
| Descripción | MOSFET ( Transistor ) - 2SK1398 | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K1398 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET
FOR HIGH SPEED SWITCHING
5 DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor
designed for a high-speed switching device in digital circuits.
The 2SK1398 is driven by a 2.5-V power source, it is
suitable for applications including headphone stereos
which need power saving.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1398
SST
FEATURES
• Directly driven by ICs having a 3-V power supply.
• Not necessary to consider driving current because of its high input impedance.
• Possible to reduce the number of parts by omitting the bias resistor.
• Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V)
VDSS
Gate to Source Voltage (VDS= 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
50
±7.0
±100
±200
250
150
–55 to +150
V
V
mA
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition)
(Previous No. TC-2342)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1991, 2000
1 page  
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100 VGS = 0 V
10
1
0.1
0.5 0.6 0.7 0.8 0.9 1.0
VSD - Source to Drain Voltage - V
2SK1398
Data Sheet D14772EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K1398.PDF ] | |
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